Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

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Stacking-dependent band gap and quantum transport in trilayer graphene

Graphene1–3 is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties4,5. In multilayer graphene6,7, stacking order provides an important yet rarely explored degree of freedom for tuning its electronic properties8. For instance, Bernal-stacked trilayer graphene (B-TLG) is semi-metallic with a tunable band overlap, a...

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Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer

The transport properties of few-layer graphene are the directly result of a peculiar band structure near the Dirac point. Here, for epitaxial graphene grown on SiC, we determine the effect of charge transfer from the SiC substrate on the local density of states (LDOS) of trilayer graphene using scaning tunneling microscopy/spectroscopy and angle resolved photoemission spectroscopy (ARPES). Diff...

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2015

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.4938466